Effect of doping on trapping center parameters in nanocrystalline CdSe thin films

► The nanocrystalline sizes of pure and doped CdSe thin films are confirmed by TEM. ► Trap parameter were determined by the thermally stimulated currents technique. ► Different methods used to evaluate the trapping parameters from TSC curve. ► Electron trap centre decreases in doped samples compared to undoped ones. ► Density of trap has been increased after doping.