Output power enhancement of InGaN/GaN based green light-emitting diodes with high-density ultra-small In-rich quantum dots

► High-density and ultra-small In-rich InGaN quantum dots were fabricated. ► The growth mechanism of QDs was influenced by NH3 flow rate. ► Better carrier confinement and smaller number of defects were achieved. ► 10% enhancement in light output power for packaged LED lamps was demonstrated.