کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1614901 | 1516340 | 2013 | 6 صفحه PDF | دانلود رایگان |
Our study revealed that wet chemically processed metal-ion (i.e., Al+3, Cr+3, Ni+2) doped TiO2 thin films could convert its conducting nature from n-type to extrinsic p-type. X-ray photoelectron spectroscopy (XPS) showed shifting of valence band edges with increasing doping concentration. The metal-ion doped TiO2 films were employed as active component in bipolar heterojunction devices, which recorded low turn-on voltage and showed rectification behavior. These results were analyzed to conclude that the doped TiO2 is p-type in nature. Temperature-dependent responses of field effect transistors (FETs) with the p-TiO2 films as channel component revealed efficient features. Conclusive results revealed that reliable and reproducible p-type conductivity could be obtained with Ni+2 doped TiO2.
► Solution processed Al+3, Cr+3 and Ni+2 doped TiO2 thin films display p-type conductivity.
► The p-type conductivity was examined through X-ray photoelectron spectroscopy and current–voltage responses.
► The doped thin films were employed as active components in field effect transistor (FET) devices.
Journal: Journal of Alloys and Compounds - Volume 553, 15 March 2013, Pages 188–193