Band gap modulation of ZnCdO alloy thin films with different Cd contents grown by pulsed laser deposition

ZnCdO thin films with different Cd contents have been deposited on quartz substrate by pulsed laser deposition. All the obtained films have a hexagonal wurtzite ZnO structure with a highly c-axis orientation without any Cd related phases from the XRD patterns. The band gap energy of ZnCdO films extending to 2.88 eV can be achieved by incorporating 9.6% Cd content. The bound excitons emission at 2.925 eV in the ZnCdO thin film can be found in the low temperature photoluminescence measurement.

► Preparation and characterization of ZnCdO alloy thin films with high Cd contents.
► Band gap of ZnCdO can be modulated from 2.88  eV to 3.26 eV at room temperature.
► 9.6 at.% Cd content of ZnCdO alloy can be achieved on quartz substrate.