Electrical and switching properties of Se85Te15−xSbx (0 ≤ x ≤ 6 at.wt%) thin films

► Structure identification of Se85Te15−xSbx (x = 0, 4 and 6 at.wt%) films are carried out. ► The switching phenomenon of a-Se85Te15−xSbx (x = 0, 4 and 6at.wt%) in thin film form of different thicknesses ranging from (167.5-630 nm). ► The current-voltage (I-V) characteristics at different temperature. ► The conduction activation energy, the threshold switching voltage and the threshold activation energy were calculated. ► The electrothermal model support the switching mechanism in the investigated compositions.