Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction

A ZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current–voltage (I–V) measurements between 300 and 380 K with 20 K intervals. The short current density (Jsc) and open circuit voltage (Voc) parameters have been determined between 40 and 100 mW/cm2. The photovoltaic parameters of the device have been also determined under 100 mW/cm2 and AM1.5 illumination condition.

► A ZnO/p-InP heterojunction has been obtained by dc sputtering of 50 nm ZnO on p-InP wafer.
► Electrical parameters of Al/ZnO/p-InP device such as ideality factor, barrier height and series resistance have been calculated between 300 and 380 K.
► The change at the photocurrent density and the open circuit voltage of the ZnO/p-InP cell have been examined between 40 and 100 mW/cm2 illumination.
► The photovoltaic properties of the ZnO/p-InP cell have been determined under 100 mW/cm2 and AM1.5 illumination condition.