Analysis of current-voltage characteristics of Al/p-ZnGa2Se4/n-Si nanocrystalline heterojunction diode

► Our work is based on the fabrication and characterization of nanostructure ZnGa2Se4/n-Si thin film for the first time. ► The dark I-V characteristics of the heterojunction diode at various temperatures have been investigated to determine the electronic conduction mechanism parameters of this diode.