کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1618736 1516383 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Core level photoelectron spectroscopy of LiGaS2 and Ga–S bonding in complex sulfides
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Core level photoelectron spectroscopy of LiGaS2 and Ga–S bonding in complex sulfides
چکیده انگلیسی

The electronic parameters of the lithium thiogallate LiGaS2 have been evaluated by X-ray photoelectron spectroscopy (XPS). Spectral features of all constituent element core levels and Auger lines have been considered. The Ga–S bonding effects in Ga-bearing sulfide crystals have been discussed using binding energy difference Δ2p(S–Ga) = BE(S 2p) − BE(Ga 3d) as a representative parameter to quantify the valence electron shift from gallium to sulfur atoms. The value Δ2p(S–Ga) = 141.9 eV found for LiGaS2 is very close to that evaluated for AgGaS2. This relation is an indicator of closely coincident ionicity of Ga–S bonds in LiGaS2 and AgGaS2.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 497, Issues 1–2, 14 May 2010, Pages 244–248
نویسندگان
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