Structure and electrical properties of PbZrO3 antiferroelectric thin films doped with barium and strontium

In this paper, we report on the structure and electrical properties of lead zirconate (PbZrO3) thin films doped with barium (Ba2+) and strontium (Sr2+) deposited on platinum-buffered silicon substrates by a sol–gel method. Effects of Ba2+ and Sr2+ dopants on microstructure and electrical properties of the PbZrO3 antiferroelectric thin films were investigated in details. X-ray diffraction patterns and scanning electron microscope micrographs illustrated that orientation and surface microstructure of these antiferroelectric films were dopant-dependent. The dielectric measurements showed that Sr2+ doping stabilized the antiferroelectric phase, while Ba2+ doping destabilized the antiferroelectric phase. It was also found that fatigue property of the antiferroelectric PbZrO3 thin films was improved remarkably by the dopants.

Research highlights▶ The structure and electrical properties of lead zirconate (PbZrO3) thin films could be tailored by barium (Ba2+) and strontium (Sr2+) doping. ▶ Sr2+ doping stabilized the antiferroelectric phase, while Ba2+ doping destabilized the antiferroelectric phase. ▶ The fatigue property of the antiferroelectric PbZrO3 thin films was improved remarkably by Ba2+ and Sr2+ dopants.