کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1619185 | 1005717 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Room temperature deposition of Al-doped ZnO thin films on glass by RF magnetron sputtering under different Ar gas pressure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Room temperature deposition of Al-doped ZnO thin films on glass by RF magnetron sputtering under different Ar gas pressure Room temperature deposition of Al-doped ZnO thin films on glass by RF magnetron sputtering under different Ar gas pressure](/preview/png/1619185.png)
چکیده انگلیسی
ⶠThe level of oxygen vacancies significantly decreases with increasing Ar gas pressure. ⶠThe number of oxygen vacancies decreases, and the number of oxygen atom in the lattice increases. ⶠThe lattice scattering increases and the mobility is reduced by the increased lattice scattering. ⶠFinally, the reduced mobility increases the resistivity of the AZO thin films. ⶠThe mobility plays a major role in the conduction behavior of AZO thin films deposited at room temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 509, Issue 2, 12 January 2011, Pages 421-425
Journal: Journal of Alloys and Compounds - Volume 509, Issue 2, 12 January 2011, Pages 421-425
نویسندگان
Deok Kyu Kim, Hong Bae Kim,