Effect of manganese inclusion on structural, optical and electrical properties of ZnO thin films

ZnO has become promising versatile member in semiconductor technology due to its well-known performance in electronics, optics and photonics. In present investigation we have reported the impact of manganese incorporation on electrical optical and structural properties of spray deposited ZnO thin films. The study of X-ray diffraction suggests that the films are nanocrystalline in nature having hexagonal wurtzite type crystal structure. The electrical resistivity measurement shows films are semiconducting and it decreases with increase in doping percentage. Optical absorption studies show that the band-gap energy is decreased from 3.45 to 2.64 eV as the doping percentage was increased from 0 to 5 at.%. The scanning electron micrographs (SEM) of doped ZnO thin films shows network of nanotubes. The H2S sensing behaviour of films is also investigated.