Thermoelectric properties of n-type CoSb3 fabricated with high pressure sintering

Highly densified single-phase n-type polycrystalline CoSb3 samples were prepared with high pressure sintering method followed by annealing under argon environment. The microstructure and thermoelectric properties of the samples were characterized. The Hall coefficient measurements indicate that the majority carrier concentration is about 1019 cm−3 at 300 K for the annealed samples. The dimensionless figure of merit, ZT, maintains a relatively high value over a wide range of measured temperature. The maximum ZT of 0.15 is achieved at 523 K for the sample annealed at 773 K.