Preparation and characterization of Ga2xIn2(1−x)O3 films deposited on ZrO2 (1 0 0) substrates by MOCVD

Ga2xIn2(1−x)O3 films with different gallium (Ga) content x [x = Ga/(Ga + In) atomic ratio] have been deposited on ZrO2 (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD). The structural, electrical and optical properties of obtained films have been studied. Structure analysis revealed that the films deposited with Ga content x = 0.1, 0.3 and 0.5 were polycrystalline structures of bixbyite In2O3 and the samples prepared with x = 0.7 and 0.9 exhibited amorphous structures. As Ga content x increased from 0.1 to 0.9, the resistivity of the films increased from 2.20 × 10−3 to 1.90 Ω cm and the optical band gap of the films monotonously broadened from 3.72 to 4.46 eV. The average transmittance of the samples in the visible range exceeded 78%.