کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1623193 | 1516412 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
InAs0.05Sb0.95 thick film with thickness of about 120 μm was grown by modified LPE technique on InAs substrate. The Fourier transform infrared (FTIR) transmission measurement revealed that the cutoff wavelength (defined at the mid-transmittance) is 12.5 μm for InAs0.05Sb0.95 thick film. An electron mobility of 23,900 cm2/V s with a carrier density of 2.37 Ã 1016 cmâ3 at 300 K has been achieved. The investigation of the lattice dynamics of InAs0.05Sb0.95 has been made by using Raman scattering. These results indicate its potential applications for infrared detectors in long wavelength range and high-speed electron devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 465, Issues 1â2, 6 October 2008, Pages 442-445
Journal: Journal of Alloys and Compounds - Volume 465, Issues 1â2, 6 October 2008, Pages 442-445
نویسندگان
S.H. Hu, H.Y. Deng, Y. Sun, J. Wu, L.Y. Shang, T. Lin, R. Wang, N. Dai,