کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1623435 1516406 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Study on growth and characterization of ScAlMgO4 substrate crystal
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Study on growth and characterization of ScAlMgO4 substrate crystal
چکیده انگلیسی

Lattice-matched ScAlMgO4 substrate crystal for GaN and ZnO epitaxy has been grown by the Czochralski method. Polarizing microscopy observation and transmission spectrum indicate that the as-grown crystal is of good crystallization quality. The full width at half maximum (FWHM) value is 42.64 arc s. The absorption peak centered at 196 nm is caused by electronic transition from valence band to conduction band. Based on the investigations of sub-grain boundaries and cracking, the methods for reducing them are proposed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 471, Issues 1–2, 5 March 2009, Pages L43–L46
نویسندگان
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