کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1624042 1516414 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Morphological, structural, and mechanical characterizations of InGaN thin films deposited by MOCVD
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Morphological, structural, and mechanical characterizations of InGaN thin films deposited by MOCVD
چکیده انگلیسی

Presented in this study are surface roughness, crystalline structure, and nanomechanical properties of InGaN thin films deposited under various growth temperatures, obtained by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and nanoindentation techniques. The InGaN thin films with different In contents were deposited on sapphire substrates through a metal-organic chemical-vapor deposition (MOCVD) system. Changes in mechanical properties for InGaN thin films are discussed in conjunction with deposition temperature, surface morphology and crystalline structure. The XRD measurements showed that there was no phase separation of In as the In composition went from 25 at.% to 34 at.%. Moreover, both XRD and AFM showed larger grain and surface roughness in In0.25Ga0.75N thin films. Nanoindentation results indicate that hardness and Young's modulus both decreased as the indentation depth increased. The contact stress–strain relationships were also analyzed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 463, Issues 1–2, 8 September 2008, Pages 533–538
نویسندگان
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