Fabrication and properties of silicon-based (Bi,Sm)4Ti3O12 thin film

Ferroelectric Bi3.5Sm0.5Ti3O12 (BST) thin film has been grown on n-type Si (1 0 0) substrate by chemical solution deposition and spin coating technique. X-ray diffraction and atomic force microscope analyses confirmed that the film crystallized well at 700 °C. Metal-ferroelectric-semiconductor (MFS) configuration has been fabricated using BST as ferroelectric layer. The electrical measurements were conducted in MFS capacitor. The current-voltage characteristic displayed good insulating properties. Apparent counterclockwise hysteresis of capacitance-voltage curve for this film as the ferroelectric hysteresis was observed. The measurements of dielectric constant and dissipation factor as a function of frequency exhibited excellent dielectric properties. The MFS structure can be valuable for ferroelectric-gate field effect transistor.