کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1624324 | 1516421 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
No mask epitaxial lateral overgrowth of gallium nitride on sapphire
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
GaN was deposited on patterned c-plane sapphire (0Â 0Â 0Â 1) wafers as the ELO technique without mask by metal organic chemical vapor deposition (MOCVD). The crystal structure and the growth mechanism were analyzed, this mechanism inhibited dislocations to extend to the surface of the epilayer and hollows between pits and epilayer released the stress of the material reducing the dislocation density. The properties of GaN layer were investigated by double crystal X-ray diffraction, atomic force microscopy, wet chemical etching and scanning electronic microscopy. The results proved that higher-quality GaN layer was received using this method.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 456, Issues 1â2, 29 May 2008, Pages 368-371
Journal: Journal of Alloys and Compounds - Volume 456, Issues 1â2, 29 May 2008, Pages 368-371
نویسندگان
Wei Zhang, Qiuyan Hao, Caichi Liu, Yuchun Feng,