Structural and electrical properties of SrBi2(Ta0.5Nb0.5)2O9 thin films

SrBi2(Ta0.5Nb0.5)2O9 (SBTN) thin films were obtained by polymeric precursor method on Pt/Ti/SiO2/Si(1 0 0) substrates. The film is dense and crack-free after annealing at 700 °C for 2 h in static air. Crystallinity and morphological characteristic were examined by X-ray diffraction (XRD), field emission scanning electron microscopy (FEG-SEM) and atomic force microscopy (AFM). The films displayed rounded grains with a superficial roughness of 3.5 nm. The dielectric permittivity was 122 with loss tangent of 0.040. The remanent polarization (Pr) and coercive field (Ec) were 5.1 μC/cm2 and 96 kV/cm, respectively.