Electric transport properties of RNi3Sn2 compounds (R = Y, Sm, Gd, Tb, Dy) and electronic structure of YNi3Sn2 and GdNi3Sn2

The electrical properties of the RNi3Sn2 compounds where R = Y, Sm, Gd, Tb, Dy, with HoGa2.4Ni2.6 structure type (space group P6/mmm), were investigated by means of electrical resistivity and Seebeck coefficient measurements in the temperature range 4.2–300 K. All investigated compounds exhibit metallic-like type of conductivity. Structure electronic calculations based on the full potential linearized augmented plane wave (FLAPW) method is also carried out to obtain the density of states (DOS) for YNi3Sn2 and GdNi3Sn2 compounds from which we explain the electrical properties.