کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1624652 | 1516422 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influence of alloy elements on the hydrogen storage properties in vanadium-based solid solution alloys
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The effects of vanadium content and alloy elements (Mn and Ni) on the microstructure and hydrogen absorption/desorption properties in vanadium-based solid solution alloys were studied. The results showed that vanadium content had an obvious effect on hydrogen storage capacity. With the increase of vanadium content from 5 to 10 to 35 to 77.8Â at.%, the hydrogen absorption capacity increased gradually from 1.30 to 1.55 to 2.88 to 3.11Â mass%, and the hydrogen desorption capacity first increased from 0.52 to 0.70 to 1.79Â mass%, but then decreased to 1.34Â mass%. The reversible hydrogen storage capacities in these alloys were 40, 45, 62 and 43%, respectively. Furthermore, with the increase of vanadium content the pressure plateau became more distinctive and shifted steadily to a lower pressure level. The kinetics of hydrogen absorption in these alloys was relatively quick except in the case of the 35% vanadium alloy, which could not reach equilibrium even after 90Â min. A small quantity of alloy elements Mn and Ni was able to increase the pressure plateau in the 35% vanadium content alloy and the hydrogen absorption capacity in the 5% vanadium content alloy, respectively, but had little effect on the hydrogen absorption kinetics. The microstructures in these alloys were also examined in order to provide a reasonable explanation of the results discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 455, Issues 1â2, 8 May 2008, Pages 392-397
Journal: Journal of Alloys and Compounds - Volume 455, Issues 1â2, 8 May 2008, Pages 392-397
نویسندگان
X.P. Song, P. Pei, P.L. Zhang, G.L. Chen,