Computer simulating the diffusion behavior of V and W in Co binder layer of WC–Co cemented carbide

Computer simulation was conducted in a VC-doped WC–Co system to understand the diffusion behaviour of W and V atoms in Co binder phase. Different diffusion couples, WC/Co–C, V8C7/Co and WC/Co–V–C were constructed and annealed at temperatures in the range 1100–1300 °C. The concentration profiles of V and W atoms in these couples were measured by EPMA, while the diffusion behaviour was also simulated by coupling thermodynamic and kinetic properties of W–C–Co–V system. The simulation results were in good agreement with the measured concentration profiles showing the validity of revised dynamic parameters of W–C–Co–V system.