کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1627904 | 1516461 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Hardness and oxidation resistance of the perovskite-type RRh3BxC1âx (RÂ =Â Y, Sc)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
Perovskite-type RRh3B and RRh3C (R = Y, Sc) form a continuous solid solution, RRh3BxC1âx, in the range of 0 â¦Â x â¦Â 1 with cubic structure (space group: Pm3m, Z = 1). The values of the microhardness of YRh3BxC1âx for x = 0, 0.25, 0.50, 0.75 and 1.00 are investigated as 4.4 ± 0.1, 4.9 ± 0.1, 5.5 ± 0.2, 6.4 ± 0.2 and 7.5 ± 0.15 GPa, respectively. On the other hand, the values of the microhardness of ScRh3BxC1âx for x = 0, 0.25, 0.50, 0.75 and 1.00 are 4.5 ± 0.2, 6.1 ± 0.2, 7.4 ± 0.2, 8.9 ± 0.2 and 9.6 ± 0.1 GPa, respectively. Thus, the microhardness of RRh3BxC1âx continuously becomes larger with increasing boron content. The oxidation onset temperatures of YRh3BxC1âx for x = 0, 0.25, 0.50, 0.75 and 1.00 are 604, 631, 655, 687 and 978 K, respectively. On the other hand, the oxidation onset temperatures of ScRh3BxC1âx for x = 0, 0.25, 0.50, 0.75 and 1.00 are 674, 675, 695, 725 and 753 K, respectively. Thermogravimetric analysis of the phase indicates that the oxidation onset temperature also increases with boron content. Thus, it appears that both mechanical strength and chemical stability of the RRh3BxC1âx phase essentially depend on its boron content. Ab initio calculations have been performed to obtain the equilibrium lattice constants and the bulk moduli. The calculated lattice constants are in excellent agreement with experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volumes 408â412, 9 February 2006, Pages 375-378
Journal: Journal of Alloys and Compounds - Volumes 408â412, 9 February 2006, Pages 375-378
نویسندگان
T. Shishido, Y. Ishizawa, J. Ye, S. Okada, K. Kudou, K. Iizumi, M. Oku, M. Tanaka, A. Yoshikawa, A. Nomura, T. Sugawara, S. Tozawa, K. Obara, S. Oishi, N. Kamegashira, T. Amano, R. Sahara, V. Kumar, K. Nakajima,