Thermoelectric properties of Sn-doped TiCoSb half-Heusler compounds

Half-Heusler compounds of Sn-doped TiCoSb “TiCoSnxSb1−x (x = 0.0, 0.01, and 0.05)” were prepared and their thermoelectric properties were measured above room temperature. From the EDX analysis, all the samples have three phases: the TiCoSnxSb1−x, Co-rich, and Ti-rich phases. The values of the thermoelectric power increase with Sn doping, and a positive thermoelectric power is obtained in the sample of TiCoSn0.05Sb0.95. The thermal conductivity decreases both with increasing temperature and with Sn content. The maximum value of ZT for p-type material is 0.030 at 988 K in the sample of TiCoSn0.05Sb0.95.