Linear magnetoresistance in monolayer epitaxial graphene grown on SiC

• Robust linear magnetoresistance in epitaxial monolayer graphene persists up to room temperature.
• Observed linear magnetoresistance can be explained by the resistor network model.
• New data may find applications in magnetic sensing devices which can be readily integrated with high-frequency devices.

We have observed classical linear magnetoresistance (LMR), which persists to room temperature, in clean monolayer epitaxial graphene grown on SiC. Such results are consistent with the resistor network model based on density inhomogeneity in a disordered two-dimensional system, though the observed LMR is non-saturating possibly due to formation of a quantum Hall-like state beyond the highest measurement magnetic field. Given the prospect of epitaxial graphene in high-frequency transistors, our experimental data pave the way for integration of magnetic sensing devices with high-frequency devices based on wafer-scale graphene.