High sheet resistance emitter c-Si solar cells with low SRV by local line contact with transparent conducting oxides

• High sheet resistance (Rs) solar cells suffer from low open circuit voltage (Voc).
• ITO local line contact with SiO2 passivation is used to reduce the recombination loss.
• Improvement in carrier lifetime, Voc, reveals the melioration in passivation.
• ITO full and local line contact solar cell results in 16.26% and 17.15% of efficiency respectively.

The high sheet resistance (Rs) solar cells with ITO full contact suffer from low open circuit voltage (Voc) with a negligible/no passivation effect. To overcome this, we approached ITO local line contact with SiO2 passivation to reduce the recombination loss. Passivation area increases to 91.29%. The improvement in carrier lifetime, Voc, reveals the melioration in passivation. With high Rs emitter, the ITO full contact solar cell results in efficiency of 16.26% whereas the ITO local line contact solar cell results in 17.15%.