Composition dependent preferential orientation, dielectric and ferroelectric properties of Pb(ZrxTi1 − x)O3 thin films derived by sol–gel process

Pb(ZrxTi1 − x)O3 (x = 0.35, 0.40, 0.60, 0.65) thin films were prepared by sol–gel spin on technique. From the X-ray diffraction analysis, PZT films with Zr-rich compositions (x = 0.60 and 0.65) had (111) preferential orientation and the preferential orientation changed to (100) for Ti-rich compositions (x = 0.35 and 0.40). The dielectric measurements on the above compositions at room temperature showed that the dielectric constant values were higher in Zr-rich compositions compared to Ti-rich compositions. The ferroelectric behavior measured in terms of the remnant polarization (Pr) and coercive field (Ec) up to an applied field of 260 kV/cm depicted that the Zr-rich PZT films with (111) preferential orientation had higher Pr and lower Ec values compared to the Ti-rich PZT films with (100) preferential orientation can be understood from the domain switching mechanism.

Research Highlights
► PZT films with Ti-rich composition shows preferential orientation along (100) plane.
► Preferential orientation of PZT films changes to (111) for Zr-rich composition.
► PZT films with Zr-rich composition had higher dielectric constant values.
► PZT films with (111) preferential orientation had higher Pr and lower Ec values.