کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1650538 | 1007608 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis of K-doped p-type ZnO nanorods along (100) for ferroelectric and dielectric applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Urchin-like p-type ZnO nanorods were grown along preferred (100) direction by low temperature solution technique and subjected to morphological, structural, Hall conductivity, dielectric and ferroelectric characterization. Hall voltage, bulk carrier density (hole) and mobility were found to be 0.058 V, 2.36 × 1019 cm−3 and 0.025 cm2/V s, respectively. In the temperature variation of the dielectric constant a phase transition at 343 K was observed at various frequencies. The piezoelectric charge coefficient (d33) was found to be 1.60 pC/N. In the ferroelectric hysteresis loop studies, ZnO exhibited remnant polarization and coercive field at 0.083 µC/cm2 and 3.86 kV/cm, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 64, Issue 16, 31 August 2010, Pages 1825–1828
Journal: Materials Letters - Volume 64, Issue 16, 31 August 2010, Pages 1825–1828
نویسندگان
Manoj K. Gupta, Nidhi Sinha, B.K. Singh, Binay Kumar,