Solvothermal synthesis and characterization of InS

Indium sulphide (InS) was synthesized by using a convenient solvothermal route. The X-ray diffraction analysis confirmed that 180 °C was the optimum temperature for the preparation of InS. Scanning electron microscopic images showed that morphological patterns of the samples varied depending on the growth conditions. Optical band gaps of the samples were determined from the reflectance studies.