Room temperature epitaxial growth of TiN on SiC

Epitaxial growth of a titanium nitride (TiN) on (6H)-SiC (0001) is achieved at room temperature by means of direct current magnetron sputtering. The epitaxial relationship is established by X-ray pole figure and Φ-scan. Cross-sectional transmission electron microscopy and pole figure analysis show that the orientation relationship is(111)TiN‖(0001)SiC[01¯1]TiN‖[12¯10]SiC,It is different from that on sapphire,“(111)TiN‖(0001)Al2O3[101¯]TiN‖[101¯0]Al2O3”,in spite of the same crystal structure of substrate surfaces. Different lattice mismatch is a plausible explanation.