کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1662191 | 1517704 | 2006 | 7 صفحه PDF | دانلود رایگان |

Iridium and tungsten refractory metals possess high melting points, hardness, and good electrical resistivity. Palladium has been recently deposited on W and Ir via atomic layer deposition and it is also an appropriate catalyst for the electroless deposition of copper. Palladium was deposited at 80 ± 5 °C with a PdII(hfac)2 sublimation temperature of 46.0 ± 0.5 °C using 13 sccm Ar as a carrier gas, and 105 sccm H2 as a reducing gas on Ir and W substrates for 150 cycles. The thickness of Pd was 20 and 30 Å on Ir and W substrates, respectively, with a low surface roughness. For the Cu electroless process, ethylenediamine-tetraacetic acid (EDTA) was used as a chelating agent, glyoxylic acid as a reducing agent, and additional chemicals such as polyethylene glycol and 2,2′dipyridine as surfactant and stabilizer respectively. Electroless Cu was undertaken at 60 °C with good adhesion to iridium and tungsten with Pd as a catalytic layer.
Journal: Surface and Coatings Technology - Volume 200, Issues 20–21, 22 May 2006, Pages 5760–5766