کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1662191 1517704 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Surface characterization of copper electroless deposition on atomic layer deposited palladium on iridium and tungsten
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Surface characterization of copper electroless deposition on atomic layer deposited palladium on iridium and tungsten
چکیده انگلیسی

Iridium and tungsten refractory metals possess high melting points, hardness, and good electrical resistivity. Palladium has been recently deposited on W and Ir via atomic layer deposition and it is also an appropriate catalyst for the electroless deposition of copper. Palladium was deposited at 80 ± 5 °C with a PdII(hfac)2 sublimation temperature of 46.0 ± 0.5 °C using 13 sccm Ar as a carrier gas, and 105 sccm H2 as a reducing gas on Ir and W substrates for 150 cycles. The thickness of Pd was 20 and 30 Å on Ir and W substrates, respectively, with a low surface roughness. For the Cu electroless process, ethylenediamine-tetraacetic acid (EDTA) was used as a chelating agent, glyoxylic acid as a reducing agent, and additional chemicals such as polyethylene glycol and 2,2′dipyridine as surfactant and stabilizer respectively. Electroless Cu was undertaken at 60 °C with good adhesion to iridium and tungsten with Pd as a catalytic layer.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 200, Issues 20–21, 22 May 2006, Pages 5760–5766
نویسندگان
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