کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1663013 | 1517697 | 2007 | 4 صفحه PDF | دانلود رایگان |

We have investigated effects on amorphous Si3N4 films induced by 100 keV Ne and N ions. Si3N4 films were deposited on SiO2-glass substrates by using reactive-RF-magnetron sputtering in N2 gas at room temperature. It is found that the absorbance in the UV region increases with increasing Ne ion dose, and the absorbance in the visible and infrared regions remains unchanged under Ne ion irradiation. For N ion irradiation, the absorbance in the visible and infrared regions increases with the ion dose, while the absorbance in the UV region does not exhibit a simple dose-dependence. It also appears that the refractive index exhibits a slight decrease for Ne ion irradiation and a decrease in a littlie bit complicated way for 100 keV N ion irradiation.
Journal: Surface and Coatings Technology - Volume 201, Issues 19–20, 5 August 2007, Pages 8322–8325