Localization of inelastic electron scattering in the low-loss energy regime

The spatial resolution and contrast level in electron energy-loss spectroscopy (EELS) imaging depend on the delocalization of the inelastic electron scattering cross sections. Theoretical calculations within the dipole approximation provide the lower limit for the delocalization of low loss signals, and suggest that atomic resolution EELS imaging in the low loss energy regime (<50 eV) should be possible. Here, we directly measure the localization of the inelastic electron scattering at different energy loss in the low loss regime using a clean open edge of monolayer graphene. Our results demonstrate that the delocalization depends both on the energy loss and the specific electron excitation mode contributing to the energy loss. While the plasmons are delocalized over 1.2 nm, sub-nm enhancement is observed at the edge for the low-loss signal at 11 eV, indicating the possible formation of a one-dimensional plasmon (or inter-band transition) at the edge of monolayer graphene. Our results also suggest that if the initial states or final states are atomically localized, atomic resolution EELS imaging could be obtained even in the low loss region of the spectra.

► Measurement of delocalization of inelastic electron scattering at graphene edge.
► Delocalization increases at low energy loss.
► Delocalization also depends on specific electron excitation modes.
► Drastic increase in delocalization for graphene bulk plasmon response.
► Localized edge excitation at 11 eV can be mapped out with ∼6 Å resolution.