کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1678396 | 1009941 | 2008 | 5 صفحه PDF | دانلود رایگان |
Effects of humidity on nanometer-scale oxidation of silicon nitride thin film using atomic force microscope in contact mode are studied at various values of relative humidity (RH) (30–70%). The shape of oxide protrusion is determined by the concentration of oxyanions under the tip apex and oxyanions diffusion laterally on the surface. At low RH (⩽60%), the kinetics of silicon nitride oxidation has a logarithmic relationship to oxide height versus oxidation time. The threshold time decreased and initial oxidation rate increased simultaneously as humidity increased because a high concentration of oxyanions at the oxide/silicon nitride interface was generated. When a high sample voltage (9–10 V) is applied at high RH (⩾60%), the effective electric field is decreased because of the electron being trapped in the oxide and oxyanions accumulating on the oxide surface.
Journal: Ultramicroscopy - Volume 108, Issue 10, September 2008, Pages 1076–1080