کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1679075 | 1009995 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Reduction of electrical damage in specimens prepared using focused ion beam milling for dopant profiling using off-axis electron holography
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Reduction of electrical damage in specimens prepared using focused ion beam milling for dopant profiling using off-axis electron holography Reduction of electrical damage in specimens prepared using focused ion beam milling for dopant profiling using off-axis electron holography](/preview/png/1679075.png)
چکیده انگلیسی
GaAs specimens containing p-n junctions have been prepared using focused ion beam (FIB) milling for examination using off-axis electron holography. By lowering the FIB operating voltage from 30 to 8Â kV, we have shown a systematic reduction of the electrically 'inactive' thickness from 220 to 100Â nm, resulting in a significant increase in the step in phase measured across the junctions as well as an improvement in the signal-to-noise ratio. We also show that the step in phase measured across the junctions can be influenced by the intensity of the electron beam.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 108, Issue 5, April 2008, Pages 488-493
Journal: Ultramicroscopy - Volume 108, Issue 5, April 2008, Pages 488-493
نویسندگان
David Cooper, Robert Truche, Jean-Luc Rouviere,