کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1681408 1010437 2010 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of ion irradiation on internal residual stress in DLC films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Influence of ion irradiation on internal residual stress in DLC films
چکیده انگلیسی

The dependence of internal residual stress in thin diamond-like carbon films grown on Si substrate by PECVD technique on most important growth parameters, namely RF-power, DC bias voltage and substrate temperature, is described. Results show that compressive stress reaches the highest value of 2.7 GPa at low RF-power and DC bias. Increase of substrate temperature from 250 to 350 °C leads to nonlinear increase of stress value. Inhomogeneity of residual stress along the film surface disappears when film is deposited at temperatures above 275 °C. Post-growth film irradiation by P+ and In+ ions cause decrease of compressive stress followed by its inversion to tensile. For all ion energy combinations used residual stress changes linearly with normalized fluence up to 0.2 DPA with slope (8.7 ± 1.3) GPa/DPA.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 268, Issue 19, 1 October 2010, Pages 3107–3110
نویسندگان
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