8Â MeV electron irradiation effect on the dielectric and optical properties of iminodiacetic acid doped ferroelectric triglycine sulphate crystals

Single crystal of iminodiacetic acid (5 mol%) doped Tri Glycine Sulphate (IDATGS) was grown by slow evaporation from its aqueous solution at constant temperature, using solution growth method. The dielectric constant (ε′) and pyroelectric current (IP) were measured over the temperature range of 30-60 °C in the ferroelectric direction. The measured values of ε′ and IP were found to be smaller compared to pure triglycine sulphate (TGS) crystal parameters. But increased transition temperature was observed for doped crystals. Curie Weiss constants CP and Cf in the paraelectric and ferroelectric phases were also determined. The doped crystal was irradiated with graded dosages from 5 to 80 kGy of electron beam from 8 MeV Microtron at room temperature and radiation effects on optical and dielectric properties were studied. The UV-Vis absorption spectrum indicates that the UV lower cutoff shifts towards the higher wavelength region (red shift) and the optical band gap is found to be decreasing with the increase of electron dose. It is also observed that the electron irradiation effects in pure and doped TGS were found to be long lasting. The dielectric study shows that there is a gradual reduction in dielectric constant at TC and shifting of Curie temperature towards lower temperature region with the increase in electron radiation dose. The material figures of merit were found increased after the crystal was irradiated. Induced changes in the physical and optical properties due to irradiation may help one to tailor the device quality and characteristics.