کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1684797 | 1518760 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
We studied the electrical activation of Si+ ions implanted at multiple energies (80 and 180 keV) and with a total fluence up to 2.7 Ã 1014 cmâ2 in heteroepitaxial GaN films on sapphire. Calibrated scanning capacitance microscopy (SCM) is proposed as a method to measure the depth carrier profile after high temperature annealing (1100-1200 °C). Si electrically active fractions of 18% and 36% were obtained after low ramp rate furnace annealing at 1100 and 1200 °C, respectively. Interestingly, the dopant activation was significantly improved to 63% in the case of a rapid pre-annealing process at 1100 °C before the 1200 °C furnace annealing process. Furthermore, the ionised carrier fluence obtained by Hall measurements at room temperature exhibits a significant improvement for the 1100 °C RTA pre-annealed sample. This value is in good agreement with the ionised fluence calculated from the active Si profile from SCM, considering a â¼20 meV ionisation energy for Si donors in GaN.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 257, Issues 1â2, April 2007, Pages 336-339
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 257, Issues 1â2, April 2007, Pages 336-339
نویسندگان
F. Iucolano, F. Giannazzo, F. Roccaforte, L. Romano, M.G. Grimaldi, V. Raineri,