کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1705739 | 1012439 | 2012 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of electromigration simulation in test structure and actual circuit
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مکانیک محاسباتی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
With the rapid increase in circuit complexity, accurate reliability simulator is necessary as reliability testing for fabricated circuit is progressively more time and resource consuming. Simple 2D electromigration (EM) simulator has many limitations and most of the 3D EM simulations in the literature are using simple line-via structure which is only part of the real circuit structure. In this paper, a thorough comparison between simple 3D line-via structure model and 3D circuit model under different test conditions is performed using class-AB amplifier as an example, and the results showed that simple line-via structure simulation may not always correctly represent the real circuit failure site.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Mathematical Modelling - Volume 36, Issue 10, October 2012, Pages 4908-4917
Journal: Applied Mathematical Modelling - Volume 36, Issue 10, October 2012, Pages 4908-4917
نویسندگان
Feifei He, Cher Ming Tan,