کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1789596 | 1524384 | 2016 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern](/preview/png/1789596.png)
چکیده انگلیسی
A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107Â cmâ2, was achieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 445, 1 July 2016, Pages 30-36
Journal: Journal of Crystal Growth - Volume 445, 1 July 2016, Pages 30-36
نویسندگان
M.G. Mynbaeva, A.V. Kremleva, D.A. Kirilenko, A.A. Sitnikova, A.I. Pechnikov, K.D. Mynbaev, V.I. Nikolaev, V.E. Bougrov, H. Lipsanen, A.E. Romanov,