Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1−xBix/GaAs superlattice

The three-dimensional distribution of Bi atoms in a GaAs1−xBix/GaAs superlattice grown by metalorganic vapor phase epitaxy (MOVPE) was studied using atom probe tomography (APT). The Bi distribution in the growth direction deduced from APT agreed quantitatively with the complex Bi concentration profile that was discovered using high-angle annular dark-field scanning transmission electron microscopy in a previous study. More importantly, APT revealed the Bi atom distribution in the growth planes at near atomic resolution. Bi nearest neighbor distribution and concentration frequency distribution analysis of the APT data indicated a statistically random distribution of Bi atoms in 1-2 nm thick layers oriented perpendicular to the growth direction. These results provide evidence that Bi is incorporated homogeneously across the growth front even when the concentration profile in the growth direction is complex. They also suggest that MOVPE growth conditions can promote uniform Bi distribution within GaAs1−xBix layers, opening a path for application of these materials in the optoelectronic devices for which they show much promise.