کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1789671 | 1524387 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of interfaces in mosaic CVD diamond crystal
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of interfaces in mosaic CVD diamond crystal Characterization of interfaces in mosaic CVD diamond crystal](/preview/png/1789671.png)
چکیده انگلیسی
Detailed description of a way to accrete diamond single crystals in one plate using the CVD method is presented. It was found that each region of the mosaic CVD diamond crystal grown over a certain seed substrate “inherits” the crystallographic orientation of its substrate. No correlation was found between the value of misorientation of the accreted crystals and entrance of hydrogen to the boundary. It is shown that successful accretion of single crystal diamond plates in a single mosaic crystal occurs even in the case of great misorientation of crystals. The mechanical stresses appear during the fabrication of the mosaic CVD diamond crystal. Stresses accumulate during accretion of the regions, which grow over substrates with different orientations, in a common structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 442, 15 May 2016, Pages 62-67
Journal: Journal of Crystal Growth - Volume 442, 15 May 2016, Pages 62-67
نویسندگان
Anatoly B. Muchnikov, Dmitry B. Radishev, Anatoly L. Vikharev, Alexei M. Gorbachev, Anatoly V. Mitenkin, Mikhail N. Drozdov, Yuri N. Drozdov, Pavel A. Yunin,