Heavily tellurium doped n-type InGaAs grown by MOCVD on 300 mm Si wafers

• Heavily tellurium doped MOCVD process for n-type In0.53Ga0.47As on 300 mm Si wafers
• 8x1019 cm-3 is amongst the highest electron concentrations for MOCVD In0.53Ga0.47As
• Excellent sheet resistance uniformity over the wafer surface

Tellurium has several remarkable properties that make it an attractive n-type dopant in III–V semiconductors, namely high incorporation and activation efficiency resulting in high achievable doping levels in combination with a low diffusion coefficient. However, it suffers from a strong memory effect related to its surfactant behavior that inhibits sharp junction interface formation.We report Te-doped In0.53Ga0.47As with an electron density of 8×1019 cm−3. The layers were grown by MOCVD on 300 mm Si wafers and were characterized by SIMS, XRD, Hall effect, and sheet resistivity mapping. The high active electron density and the excellent uniformity over the wafer surface make this process promising for selective regrowth of highly doped source and drain in VLSI.