کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1789959 1524400 2015 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Temperature-dependent orientation study of the initial growth of pentacene on amorphous SiO2 by molecular dynamics simulations
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Temperature-dependent orientation study of the initial growth of pentacene on amorphous SiO2 by molecular dynamics simulations
چکیده انگلیسی
Temperature-dependent molecular orientations in the initial growth processes of pentacene on amorphous SiO2 surface with different substrate temperatures have been investigated using molecular dynamics simulations. As the substrate temperature ranges from 270 K to 600 K, there exists a transition behavior for pentacene cluster from the normal-oriented, ordered configuration to the lateral-oriented, disordered one as measured by the decreased average orientation angle and order parameter, showing the significant effect of the substrate temperature on the molecular orientation. The transition behavior is related to the strength relationship between molecule-molecule interactions and molecule-substrate interactions. During the optimal temperature range between 300 K and 350 K, the pentacene molecules tend to form the normal-oriented, well-ordered cluster driven by the dominant molecule-molecule interactions, which is affected by the substrate temperature in a greater degree than the molecule-substrate interactions. When the temperature is lower than 300 K, the ordering of pentacene cluster becomes a little worse. A higher substrate temperature results in the lateral orientation with the weakening of the molecule-molecule interactions. Then the further intensification of molecular thermal motion gradually makes the molecules separate from the cluster or the substrate surface, resulting in the appearance of the undesirable separated configuration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 429, 1 November 2015, Pages 35-42
نویسندگان
, , , ,