Fabrication and performance of 1.3-μm 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE

• Fabrication of high performance 1.3-μm 10-Gb/s CWDM VCSELs grown by MOVPE under nitrogen;
• Single mode and low power consumption VCSELs in full CWDM 1.3-μm band.

Recent progress in the fabrication and performance of 1.3-μm 10-Gb/s, low power consumption wafer-fused VCSELs grown by MOVPE under nitrogen atmosphere are presented and discussed. By optimization of the growth conditions and implementation of a cavity adjustment technique, the wavelength yield was increased to up to 70% for all four coarse wavelength division multiplexing (CWDM) channels implemented. It was demonstrated that single-mode devices can have threshold and operation currents below 1 and 7 mA, respectively, in the full 0–80 °C temperature range. The reproducibility of the fabrication process and prospects for enhancing performance and yield of such VCSELs are also discussed.