کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1790327 1524428 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth and EPR properties of HoVO4 single crystals
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Growth and EPR properties of HoVO4 single crystals
چکیده انگلیسی


• Good quality HoVO4 single crystals were grown by the Czochralski method.
• HoVO4 EPR and PL spectra revealed V4+ ions contribution besides Ho3+ ions.
• Angular dependences of EPR spectra have shown C3 local symmetry of Ho3+ ions.

HoVO4 single crystals were grown by the Czochralski method. The crystals were transparent. EPR spectra of the well oriented crystals were recorded as a function of the applied magnetic field. Besides Ho3+, V4+ ions were detected. EPR-NMR program was applied to find spin Hamiltonian parameters of Ho3+ ions. Absorption, excitation and photoluminescence spectra were measured, revealing the presence of electronic transitions characteristic for Ho3+ ions.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 401, 1 September 2014, Pages 177–180
نویسندگان
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