کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1790540 | 1524434 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Polytype transformation and structural characteristics of 3C-SiC on 6H-SiC substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The 3C-SiC (111) was grown on on-axis 6H-SiC substrates in a temperature interval ranging from 1675 °C where 3C-SiC nucleated, to 1825 °C where coverage of the substrate by 3C-SiC was nearly 100%. The 6H- to 3C-SiC transformation was not abrupt and two different transitions could be observed. The first one occurs before or during 3C-SiC nucleation and consists of 6H-, 3C-, 15R-SiC and other mixed stacking sequences. The second one appears due to 6H-SiC and 3C-SiC competition during the growth and results in needle-like interface. A proposed model elucidates connection between fourâfold twins nucleating at the 6H-/3C-SiC interface and the formation of depressions at the surface of the 3C-SiC layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 395, 1 June 2014, Pages 109-115
Journal: Journal of Crystal Growth - Volume 395, 1 June 2014, Pages 109-115
نویسندگان
R. Vasiliauskas, M. Marinova, M. Syväjärvi, E.K. Polychroniadis, R. Yakimova,