کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1790661 | 1524440 | 2014 | 6 صفحه PDF | دانلود رایگان |
• The eutectic composition is necessarily found at the triple-junction in the solution of the stoichiometric-compound/stoichiometric-compound eutectic.
• A general solution is proposed for any kind of eutectics and phase diagrams.
• The current work makes it possible to incorporate the kinetics of triple-junction into the eutectic growth model.
An exact solution of solute diffusion for the stoichiometric-compound/stoichiometric-compound eutectic is derived for a planar interface. Compared with the previous work, the solution is consistent with the kinetics of triple-junction, i.e. the eutectic composition is necessarily found at the triple-junction. Adopting an averaged conservation law at the interface, a general solution is proposed for any kind of eutectics and phase diagrams. Simulation results in the Ni5Si2–Ni3Si eutectic growth show that the general solution is a good approximation. The current work makes it possible to incorporate the kinetics of triple-junction into the eutectic growth model.
Journal: Journal of Crystal Growth - Volume 389, 1 March 2014, Pages 68–73