Growth of SiC by PVT method in the presence of cerium dopant

• SiC bulk crystals were grown by PVT method in the presence of Ce dopant.
• Structural, optical and electrical properties of SiC crystals are studied.
• We report the consequences of using cerium in its oxide form (CeO2).
• Ce2O3 and CeO2 are found to coexist on the SiC post-growth surfaces.
• The continuous presence of the cerium vapour in the growth atmosphere is confirmed.

The effect of the presence of CeO2 in the source material on the properties of SiC crystals grown by Physical Vapor Transport (PVT) method is investigated. The doping efficiency and, indirectly, the presence of the cerium vapour in the growth atmosphere were examined by study of structural, electrical and optical properties of the crystals. X-ray photoelectron spectroscopy shows that Ce2O3 and CeO2 coexist on the SiC post-growth surfaces. A detectable Ce incorporation is observed only in the last grown part of the crystal.