کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1790732 | 1524452 | 2013 | 6 صفحه PDF | دانلود رایگان |
• A mixture of Na2SiO3 and NaSi was prepared by reaction of SiO2 and Na at 650 °C.
• Single crystals of NaSi were obtained by cooling of the Na2SiO3 and NaSi mixture.
• Coarse Si grains were crystallized by Na evaporation from the mixture at 830 °C.
• The yield of the Si grains was 85% of the ideal amount expected from the reaction.
A mixture of Na2SiO3 and NaSi was found to be formed by reaction of SiO2 and Na at 650 °C as follows: 5Na+3SiO2→2Na2SiO3+NaSi. Single crystals of NaSi were grown by cooling the mixture of Na2SiO3 and NaSi with an excess amount of Na from 850 °C, and polycrystalline Si was obtained by vaporization of Na from the crystals. Coarse grains of Si were also crystallized by Na evaporation after the formation of Na2SiO3 and Si-dissolved liquid Na at 830 °C. The Si grains were collected by washing the product with water. The yield of the Si grains was 85% of the ideal amount expected from the reaction.
Journal: Journal of Crystal Growth - Volume 377, 15 August 2013, Pages 66–71